Effect of gating and pressure on the electronic transport properties of crossed nanotube junctions: formation of a Schottky barrier

P. Havu(Aalto University), R. M. Nieminen(Aalto University), Maryam Hashemi(University of Kashan), E. Seppälä(Nokia (Finland)), Maria Kaukonen(Aalto University)
Journal of Physics Condensed Matter
March 1, 2011
Cited by 13


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