Hole mobility enhancement of pMOSFETs with strain channel induced by Ge pre-amorphization implantation for source/drain extension

Qiuxia Xu(University of Chinese Academy of Sciences), Wenfang Gao(Institute of Microelectronics), Xiaofong Duan(Institute of Physics), Ming Liu(University of California, Berkeley), H. Li(Institute of Microelectronics), Haihua Liu(Institute of Physics), He Qian(University of Science and Technology of China), Zhensheng Han(Institute of Microelectronics)
IEEE Electron Device Letters
March 1, 2006
10.1109/led.2006.870248
Cited by 12

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