Electronic Confinement and Coherence in Patterned Epitaxial Graphene
Claire Berger(Centre National de la Recherche Scientifique), Zhimin Song(Centre National de la Recherche Scientifique), Xuebin Li(Centre National de la Recherche Scientifique), Xiaosong Wu(Centre National de la Recherche Scientifique), Nate Brown(Centre National de la Recherche Scientifique), Cécile Naud(Centre National de la Recherche Scientifique), Didier Mayou(Centre National de la Recherche Scientifique), Tianbo Li(Centre National de la Recherche Scientifique), Joanna Hass(Centre National de la Recherche Scientifique), Alexei Marchenkov(Centre National de la Recherche Scientifique), Edward H. Conrad(Centre National de la Recherche Scientifique), Phillip N. First(Centre National de la Recherche Scientifique), Walt A. de Heer(Centre National de la Recherche Scientifique)
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Abstract
Ultrathin epitaxial graphite was grown on single-crystal silicon carbide by vacuum graphitization. The material can be patterned using standard nanolithography methods. The transport properties, which are closely related to those of carbon nanotubes, are dominated by the single epitaxial graphene layer at the silicon carbide interface and reveal the Dirac nature of the charge carriers. Patterned structures show quantum confinement of electrons and phase coherence lengths beyond 1 micrometer at 4 kelvin, with mobilities exceeding 2.5 square meters per volt-second. All-graphene electronically coherent devices and device architectures are envisaged.
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