3D Active Edge Silicon Detector Tests With 120 GeV Muons
C. Da Vià(University of Manchester), M. Deile(European Organization for Nuclear Research), Jasmine Hasi(University of Manchester), C. Kenney(Molecular Biology Consortium), Angela Kok(SINTEF), Sherwood Parker(University of Hawaii System), Stephen Watts(University of Manchester), G. Anelli(European Organization for Nuclear Research), Valentina Avati(University of Helsinki), V. Bassetti(Istituto Nazionale di Fisica Nucleare, Sezione di Genova), V. Boccone(Istituto Nazionale di Fisica Nucleare, Sezione di Genova), M. Bozzo(Istituto Nazionale di Fisica Nucleare, Sezione di Genova), Karsten Eggert(European Organization for Nuclear Research), F. Ferro(Istituto Nazionale di Fisica Nucleare, Sezione di Genova), Alexandre Inyakin(European Organization for Nuclear Research), J. Kaplon(European Organization for Nuclear Research), J. J. Lozano Bahilo(European Organization for Nuclear Research), Aldo Morelli(Istituto Nazionale di Fisica Nucleare, Sezione di Genova), H. Niewiadomski(European Organization for Nuclear Research), E. Noschis(European Organization for Nuclear Research), F. Oljemark(University of Helsinki), M. Oriunno(European Organization for Nuclear Research), K. Österberg(University of Helsinki), G. Ruggiero(European Organization for Nuclear Research), W. Snoeys(European Organization for Nuclear Research), S. Tapprogge(University of Helsinki)
Cited by 23Open Access
Abstract
3D detectors with electrodes penetrating through the silicon wafer and covering the edges were tested in the SPS beam line X5 at CERN in autumn 2003. Detector parameters including efficiency, signal-to-noise ratio, and edge sensitivity were measured using a silicon telescope as a reference system. The measured sensitive width and the known silicon width were equal within less than 10 mum.
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