Temperature dependency of MOSFET device characteristics in 4H- and 6H-silicon carbide (SiC)
M. Hasanuzzaman(The Abdus Salam International Centre for Theoretical Physics (ICTP)), Mohammad Tawhidul Alam(University of Tennessee at Knoxville), Leon M. Tolbert(Knoxville College), Syed K. Islam(Oak Ridge National Laboratory)
Cited by 46
Related Papers
Global prospects, progress, policies, and environmental impact of solar photovoltaic power generation
|Renewable and Sustainable Energy Reviews|2014|779
A review on compressed-air energy use and energy savings
|Renewable and Sustainable Energy Reviews|2009|464
Global advancement of solar thermal energy technologies for industrial process heat and its future prospects: A review
|Energy Conversion and Management|2019|438
Effects of various parameters on PV-module power and efficiency
|Energy Conversion and Management|2015|433
Global advancement of cooling technologies for PV systems: A review
|Solar Energy|2016|410