Dependence of dark current on carrier lifetime for InGaAs/InP avalanche photodiodes
Qingyi Zeng(Guiyang College of Traditional Chinese Medicine), Wei Lü(Shanghai Institute of Technical Physics), Weida Hu(Shanghai Institute of Technical Physics), W. J. Wang(University of Science and Technology of China), Peng Xu(Jilin University), N. Li(Shanghai Institute of Technical Physics), J. Wen(Shanghai Institute of Technical Physics), Q. Li(Shanghai Institute of Technical Physics)
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