4H-SiC Power Metal–Oxide–Semiconductor Field Effect Transistors and Schottky Barrier Diodes of 1.7 kV Rating
Naruhisa Miura(Mitsubishi Electric (Japan)), Tatsuo Oomori(Mitsubishi Electric (Japan)), Shohei Yoshida(Kanazawa University), Hiroaki Sumitani(Mitsubishi Electric (Japan)), Kenichi Kuroda(University of Michigan), Y. Matsuno(Mitsubishi Electric (Japan)), Shoyu Watanabe(Mitsubishi Electric (Japan)), Masayuki Imaizumi(Mitsubishi Electric (Japan)), Hidekazu Yamamoto(Mitsubishi Electric (Japan)), Yukiyasu Nakao(Mitsubishi Electric (Japan))
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