Emerging Photoluminescence in Monolayer MoS<sub>2</sub>

Andrea Splendiani(University of California, Berkeley), L. Sun(University of California, Berkeley), Yuanbo Zhang(University of California, Berkeley), Tianshu Li(University of California, Davis), Jonghwan Kim(University of California, Berkeley), Chi Yung Chim(University of California, Berkeley), Giulia Galli(University of California, Davis), Feng Wang(Lawrence Berkeley National Laboratory)
Nano Letters
March 15, 2010
Cited by 9,337

Abstract

Novel physical phenomena can emerge in low-dimensional nanomaterials. Bulk MoS(2), a prototypical metal dichalcogenide, is an indirect bandgap semiconductor with negligible photoluminescence. When the MoS(2) crystal is thinned to monolayer, however, a strong photoluminescence emerges, indicating an indirect to direct bandgap transition in this d-electron system. This observation shows that quantum confinement in layered d-electron materials like MoS(2) provides new opportunities for engineering the electronic structure of matter at the nanoscale.


Related Papers

No related papers found

Powered by citation graph analysis