Experimental confirmation of temperature dependent negative capacitance in ferroelectric field effect transistor
Giovanni A. Salvatore(École Polytechnique Fédérale de Lausanne), Adrian M. Ionescu(NanoLab (United States)), Alexandru Rusu(École Polytechnique Fédérale de Lausanne)
Cited by 98
Related Papers
Length scaling of the Double Gate Tunnel FET with a high-K gate dielectric
|Solid-State Electronics|2007|224
Delta lake
|Proceedings of the VLDB Endowment|2020|210
Metal-Ferroelectric-Meta-Oxide-semiconductor field effect transistor with sub-60mV/decade subthreshold swing and internal voltage amplification
|Unknown|2010|195
A new definition of threshold voltage in Tunnel FETs
|Solid-State Electronics|2008|173