Single-hole dispersion relation for the real Cu<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">O</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>plane

V. I. Belinicher(Institute of Semiconductor Physics), A. L. Chernyshev(Institute of Semiconductor Physics), V. A. Shubin(Institute of Semiconductor Physics)
Physical review. B, Condensed matter
December 1, 1996
Cited by 68Open Access
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Abstract

Dispersion relation for the Cu${\mathrm{O}}_{2}$ hole is calculated based on the generalized $t\ensuremath{-}{t}^{\ensuremath{'}}\ensuremath{-}J$ model, recently derived from the three-band one. Numerical ranges for all model parameters, $\frac{t}{J}=2.4\ensuremath{-}2.7$, $\frac{{t}^{\ensuremath{'}}}{t}=0.0 \mathrm{to} \ensuremath{-}0.25$, $\frac{{t}^{\ensuremath{'}\ensuremath{'}}}{t}=0.1\ensuremath{-}0.15$, and three-site terms $2{t}_{N}\ensuremath{\sim}{t}_{S}\ensuremath{\sim}\frac{J}{4}$ have been strongly justified previously. Physical reasons for their values are also discussed. A self-consistent Born approximation is used for the calculation of the hole dispersion. Good agreement between calculated ${E}_{\mathrm{k}}$ and one obtained from the angle-resolved photoemission experiments is found. A possible explanation of the broad peaks in the experimental energy distribution curves at the top of the hole band is presented.


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