High-efficiency CuIn<i>x</i>Ga1−<i>x</i>Se2 solar cells made from (In<i>x</i>,Ga1−<i>x</i>)2Se3 precursor films
Andrew M. Gabor(National Laboratory of the Rockies), John R. Tuttle(National Laboratory of the Rockies), David S. Albin(National Laboratory of the Rockies), Miguel Á. Contreras(National Laboratory of the Rockies), R. Noufi(National Laboratory of the Rockies), A. M. Hermann(University of Colorado Boulder)
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Abstract
In, Ga, and Se were coevaporated to form precursor films of (Inx,Ga1−x)2Se3. The precursors were then converted to CuInxGa1−xSe2 by exposure to a flux of Cu and Se. The final films were smooth, with tightly packed grains, and had a graded Ga content as a function of film depth. Photovoltaic devices made from these films showed good tolerance in device efficiency to variations in film composition. A device made from these films resulted in the highest total-area efficiency measured for any non-single-crystal, thin-film solar cell, at 15.9%.
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