Ultralow drive voltage silicon traveling-wave modulator
Tom Baehr‐Jones(University of Washington), Ran Ding(University of Washington), Yang Liu(University of Washington), Ali Ayazi(University of Washington), Thierry Pinguet(University of Washington), Nicholas C. Harris(University of Washington), Matt Streshinsky(University of Washington), Po-Shen Lee(University of Washington), Yi Zhang(University of Washington), Andy Eu-Jin Lim(Agency for Science, Technology and Research), Tsung-Yang Liow(Agency for Science, Technology and Research), Selin Hwee-Gee Teo(Agency for Science, Technology and Research), Guo‐Qiang Lo(Agency for Science, Technology and Research), Michael Hochberg(University of Delaware)
Cited by 188Open Access
Abstract
There has been great interest in the silicon platform as a material system for integrated photonics. A key challenge is the development of a low-power, low drive voltage, broadband modulator. Drive voltages at or below 1 Vpp are desirable for compatibility with CMOS processes. Here we demonstrate a CMOS-compatible broadband traveling-wave modulator based on a reverse-biased pn junction. We demonstrate operation with a drive voltage of 0.63 Vpp at 20 Gb/s, a significant improvement in the state of the art, with an RF energy consumption of only 200 fJ/bit.
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