From Atomistic to Device Level Investigation of Hybrid Redox Molecular/Silicon Field-Effect Memory Devices

Julien Buckley(Commissariat à l'Énergie Atomique et aux Énergies Alternatives), B. De Salvo(Commissariat à l'Énergie Atomique et aux Énergies Alternatives), E. Jalaguier(Institut polytechnique de Grenoble), G. Ghibaudo(Institut polytechnique de Grenoble), C. Spinella(Institute for Microelectronics and Microsystems), P. Blaise(Institut polytechnique de Grenoble), S. Lombardo(Institute for Microelectronics and Microsystems), Kai Huang(Commissariat à l'Énergie Atomique et aux Énergies Alternatives), Adrian Calboréan(Institut polytechnique de Grenoble), D. Mariolle(Institut polytechnique de Grenoble), Nicolas Chevalier(Institut polytechnique de Grenoble), Giuseppe Nicotra(Institute for Microelectronics and Microsystems), Pascale Maldivi(Institut polytechnique de Grenoble), R. Baptist(Institut polytechnique de Grenoble), Florence Duclairoir(Université Paris-Sud), Tiziana Pro(Commissariat à l'Énergie Atomique et aux Énergies Alternatives), Venera Aiello(Institut polytechnique de Grenoble), M. Gély(Institut polytechnique de Grenoble), G. Delapierre(Commissariat à l'Énergie Atomique et aux Énergies Alternatives), Régis Barattin(Institut polytechnique de Grenoble)
Unknown
May 1, 2009
10.1109/imw.2009.5090591
Cited by 2

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