Evolving shock-wave profiles measured in a silicon crystal by picosecond time-resolved x-ray diffraction
Yoichiro Hironaka(Institute for Laser Technology), Masatake Yoshida(National Institute for Materials Science), Ken‐ichi Kondo(Tokyo Institute of Technology), Hisataka Takenaka(NTT (Japan)), Kazutaka G. Nakamura(Tokyo Institute of Technology), Akio Yazaki(Tokyo Institute of Technology), Fumikazu Saito(Tokyo Institute of Technology)
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