An investigation of the electronic properties of MgO doped with group III, IV, and V elements: trends with varying dopant atomic number
Guodong Liu(Hebei University of Technology), Changhui Ye(Zhejiang University of Technology), Shulin Ji(Chinese Academy of Sciences), Guang Tao Fei(Chinese Academy of Sciences), Liangliang Yin(Hunan University)
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