Novel Wet Etching of Silicon Nitride in a Single Wafer Spin Processor

Abstract

Selective etching of silicon nitride films has been an important process step in integrated circuit manufacturing for many years [1-. In the past, this process has been mainly used to remove the silicon nitride mask which protects the transistor active area during the formation of oxide isolation. Recently, this process has also been used to remove silicon nitride spacers after source and drain formation for better management of the strained channel [. Advanced device integration continues to add more steps in which the selective removal of silicon nitride is needed.