Infrared Conductivity of Elemental Bismuth under Pressure: Evidence for an Avoided Lifshitz-Type Semimetal-Semiconductor Transition
N. P. Armitage(Johns Hopkins University), D. van der Marel(University of Geneva), F. Lévy(École Polytechnique Fédérale de Lausanne), L. Forró(University of Notre Dame), E. Giannini(University of Geneva), Riccardo Tediosi(University of Geneva)
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