High-Temperature Operation GaSb/GaAs Quantum-Dot Infrared Photodetectors

Wei-Hsun Lin(National Tsing Hua University), Chi‐Che Tseng(National Tsing Hua University), Kuang-Ping Chao(National Tsing Hua University), Shu-Cheng Mai(National Tsing Hua University), Shu-Yen Kung(National Tsing Hua University), Shug-Yi Wu(National Tsing Hua University), Shih‐Yen Lin(National Yang Ming Chiao Tung University), Meng‐Chyi Wu(National Tsing Hua University)
IEEE Photonics Technology Letters
November 18, 2010
10.1109/lpt.2010.2091949
Cited by 17

Abstract

A ten-period GaSb/GaAs quantum-dot infrared photodetector (QDIP) is investigated in this letter. A broad detection window 2-5 μm with peak responses at ~ 3.7 μm is observed. Compared with the 4- to 8-μm detection window of a standard InAs/GaAs QDIP, the detection wavelengths of the GaSb/GaAs QDIP are shifted to the 2- to 5- μm range such that water absorption is avoided. The enhanced normal incident absorption of the GaSb QDIP is attributed to its smaller sizes compared with InAs QDs. Without additional high-bandgap barrier layers, the 200 K spectral response of the simple stacked GaSb/GaAs QDIP has already been observed, which has demonstrated the potential for practical applications of the GaSb/GaAs QDIPs.

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