Unconventional Electronic Structure Evolution with Hole Doping in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi>Bi</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi>Sr</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi>CaCu</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi>O</mml:mi></mml:mrow><mml:mrow><mml:mn>8</mml:mn><mml:mo>+</mml:mo><mml:mi>δ</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>: Angle-Resolved Photoemission Results

D. S. Marshall(Stanford University), D. S. Dessau(Stanford Synchrotron Radiation Lightsource), A. G. Loeser(Stanford University), C. H. Park(Stanford University), A. Y. Matsuura(Stanford University), J. N. Eckstein(Varian Medical Systems (United States)), I. Božović(Varian Medical Systems (United States)), P. Fournier(Stanford University), A. Kapitulnik(Stanford University), W. E. Spicer(Stanford University), Zhi‐Xun Shen(Stanford Synchrotron Radiation Lightsource)
Physical Review Letters
June 17, 1996
Cited by 610

Abstract

We report angle-resolved photoemission results on ${\mathrm{Bi}}_{2}{\mathrm{Sr}}_{2}{\mathrm{Ca}}_{1\ensuremath{-}x}{\mathrm{Dy}}_{x}{\mathrm{Cu}}_{2}{\mathrm{O}}_{8+\ensuremath{\delta}}$ and oxygen depleted ${\mathrm{Bi}}_{2}{\mathrm{Sr}}_{2}{\mathrm{CaCu}}_{2}{\mathrm{O}}_{8+\ensuremath{\delta}}$ investigating the electronic structure changes above ${T}_{c}$ in materials with hole doping levels ranging from insulating to slightly overdoped. Near optimal hole doping, the Fermi surface is large and consistent with band calculations. In underdoped samples with ${T}_{c}$ of 60--70 K, portions of this Fermi surface are not seen. This change is related to the opening of an energy gap near $(\ensuremath{\pi},0)$ above ${T}_{c}$.


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