Quantum confined carrier transition in a GaN/InGaN/GaN single quantum well bounded by AlGaN barriers
Young S. Park(Ulsan National Institute of Science and Technology), Yoon Shon(Dongguk University), Robert A. Taylor(University of Oxford), Seung-Woong Lee(Government of the Republic of Korea), Seong-Ran Jeon(Korea Photonics Technology Institute), Im Taek Yoon(Dongguk University), Mark Holmes(The University of Tokyo)
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