Cleaning Technology for Advanced Devices beyond 20 nm Node

Abstract

Several attempts have recently been made to use novel high-k dielectric materials, such as AlxOy, HfxAlyOz, HfxSiyOz, and HfxOy, to improve electrical device characteristics of advanced devices. Moreover, it is becoming increasingly important in the ULSI manufacturing process to suppress contamination by metal or particles from the wafer backside or edge. This paper reviews the wafer backside/edge control technology for suppression of metal contamination.