Oscillations up to 712 GHz in InAs/AlSb resonant-tunneling diodes
E. R. Brown(MIT Lincoln Laboratory), J. R. Söderström(California Institute of Technology), C. D. Parker(MIT Lincoln Laboratory), L.J. Mahoney(MIT Lincoln Laboratory), K.M. Molvar(MIT Lincoln Laboratory), T. C. McGill(California Institute of Technology)
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Abstract
Oscillations have been obtained at frequencies from 100 to 712 GHz in InAs/AlSb double-barrier resonant-tunneling diodes at room temperature. The measured power density at 360 GHz was 90 W cm−2, which is 50 times that generated by GaAs/AlAs diodes at essentially the same frequency. The oscillation at 712 GHz represents the highest frequency reported to date from a solid-state electronic oscillator at room temperature.
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