Ferromagnetism in Dilute Magnetic Semiconductors through Defect Engineering: Li-Doped ZnO
Jiabao Yi(National University of Singapore), Chaesung Lim(National University of Singapore), Guozhong Xing(Nanyang Technological University), Haiming Fan(National University of Singapore), L. H. Van(National University of Singapore), S. Huang(Nanyang Technological University), Kesong Yang(National University of Singapore), X. L. Huang(National University of Singapore), Xiubo Qin(Institute of High Energy Physics), Baoyi Wang(Chinese Academy of Sciences), Tom Wu(Nanyang Technological University), Lan Wang(Nanyang Technological University), Haitao Zhang(National University of Singapore), Xing Gao(National University of Singapore), T Liu(National University of Singapore), Andrew T. S. Wee(National University of Singapore), Yuan Ping Feng(National University of Singapore), Jun Ding(National University of Singapore)
Cited by 449Open Access
Abstract
We demonstrate, both theoretically and experimentally, that cation vacancy can be the origin of ferromagnetism in intrinsic dilute magnetic semiconductors. The vacancies can be controlled to tune the ferromagnetism. Using Li-doped ZnO as an example, we found that while Li itself is nonmagnetic, it generates holes in ZnO, and its presence reduces the formation energy of Zn vacancy, and thereby stabilizes the zinc vacancy. Room temperature ferromagnetism with p type conduction was observed in pulsed laser deposited ZnO:Li films with certain doping concentration and oxygen partial pressure.
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