Carrier trapping in single quantum wells with different confinement structures

Jochen Feldmann(Philipps University of Marburg), G. Peter(Philipps University of Marburg), E. O. Göbel(Philipps University of Marburg), K. Leo(Max Planck Society), H.-J. Polland(Max Planck Society), K. Ploog(Max Planck Society), K. Fujiwara(Mitsubishi Electric (Japan)), Takashi Nakayama(Mitsubishi Electric (Japan))
Applied Physics Letters
July 27, 1987
Cited by 78

Abstract

The trapping efficiency and trapping dynamics of photoexcited carriers in GaAs/AlGaAs single quantum wells with different confinement structures are examined at low temperature by means of picosecond luminescence as well as photoluminescence excitation spectroscopy. The trapping efficiency is 100% only in graded-index separate confinement heterostructures with a linear band-gap profile. The lower trapping efficiency of other confinement structures is due to radiative and nonradiative recombination in the confinement layers.


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