The relentless march of the MOSFET gate oxide thickness to zero
G. Timp(University of Notre Dame), B. E. Weir(AT&T (United States)), H.-J. Gossmann, K.K. Bourdelle, F. Klemens(Brookhaven National Laboratory), J. M. Rosamilia, R. N. Kleiman(McMaster University), David A. Muller(Cornell University), S. Moccio, A. Kornblit, M Green, D. M. Tennant(University of Tennessee at Knoxville), F.H. Baumann, Winston Timp(Johns Hopkins University), J. P. Garno, A. Ghetti, Y Kim, J. Bude, P. J. Silvėrman, T. Boone(Amgen (United States)), T. Sorsch, R. T. Tung(City University of New York)
Cited by 35
Related Papers
One-Dimensional Electrical Contact to a Two-Dimensional Material
|Science|2013|3.1k
Superconducting Interfaces Between Insulating Oxides
|Science|2007|2.7k
Janus monolayers of transition metal dichalcogenides
|Nature Nanotechnology|2017|2.4k
The physics and chemistry of the Schottky barrier height
|Applied Physics Reviews|2014|1.3k
Proximate Kitaev quantum spin liquid behaviour in a honeycomb magnet
|Unknown|2016|863