C60 thin film transistors

Robert C. Haddon(AT&T (United States)), A. S. Perel(AT&T (United States)), R. C. Morris(AT&T (United States)), T. T. M. Palstra(AT&T (United States)), A. F. Hebard(AT&T (United States)), R. M. Fleming(AT&T (United States))
Applied Physics Letters
July 3, 1995
10.1063/1.115503
Cited by 555Open Access
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Abstract

N-channel field effect transistors with excellent device characteristics have been fabricated by utilizing C60 as the active element. Measurements on C60 thin films in ultrahigh vacuum show on-off ratios as high as 106 and field effect mobilities up to 0.08 cm2/V s.

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