Controlling Schottky energy barriers in organic electronic devices using self-assembled monolayers

I. H. Campbell(Los Alamos National Laboratory), Shai Rubin(Los Alamos National Laboratory), Thomas A. Zawodzinski(Los Alamos National Laboratory), J. D. Kress(Los Alamos National Laboratory), R. L. Martin(Los Alamos National Laboratory), D. L. Smith(Los Alamos National Laboratory), N. N. Barashkov(Los Alamos National Laboratory), John P. Ferraris(The University of Texas at Dallas)
Physical review. B, Condensed matter
November 15, 1996
Cited by 595

Abstract

We demonstrate tuning of Schottky energy barriers in organic electronic devices by utilizing chemically tailored electrodes. The Schottky energy barrier of Ag on poly[2-methoxy, 5-(2\ensuremath{'}-ethyl-hexyloxy)- 1,4-phenylene was tuned over a range of more than 1 eV by using self-assembled monolayers (SAM's) to attach oriented dipole layers to the Ag prior to device fabrication. Kelvin probe measurements were used to determine the effect of the SAM's on the Ag surface potential. Ab initio Hartree-Fock calculations of the molecular dipole moments successfully describe the surface potential changes. The chemically tailored electrodes were then incorporated in organic diode structures and changes in the metal/organic Schottky energy barriers were measured using an electroabsorption technique. These results demonstrate the use of self-assembled monolayers to control metal/organic interfacial electronic properties. They establish a physical principle for manipulating the relative energy levels between two materials and demonstrate an approach to improve metal/organic contacts in organic electronic devices. \textcopyright{} 1996 The American Physical Society.


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