Continuous-wave operation of InGaN multiple quantum well laser diodes grown by molecular beam epitaxy
M. Kauer(Sharp Laboratories of Europe (United Kingdom)), Jon Heffernan(Engineering and Physical Sciences Research Council), S. E. Hooper(Sharp Laboratories of Europe (United Kingdom)), T. M. Smeeton(Sharp Laboratories of Europe (United Kingdom)), V. Bousquet(Sharp Laboratories of Europe (United Kingdom)), Christoph Zellweger(Sharp Laboratories of Europe (United Kingdom)), Kelsey E. Johnson(University of Minnesota), J. Barnes(Sharp Laboratories of Europe (United Kingdom)), J. Windle(Sharp Laboratories of Europe (United Kingdom))
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