Submilliampere threshold current in 1.3 µmInAsP <i>n</i> -type modulation doped MQW lasers grown bygas source molecular beam epitaxy

H. Shimizu(Furukawa Electric (Japan)), A. Kasukawa(Furukawa Electric (Japan)), N. Yamanaka(Furukawa Electric (Japan)), K. Kumada(Furukawa Electric (Japan)), N. Iwai(Kyoto Prefectural University of Medicine), T. Mukaihara(Furukawa Electric (Japan))
Electronics Letters
August 6, 1998
Cited by 8


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