Interface studies of metal-semiconductor contacts by means of SIMS, nuclear reaction and RBS

J.P. Ponpon(Générale de Santé), P. Siffert(Aarhus University), A. Grob, R. Stuck, J.J. Grob(Centre National de la Recherche Scientifique)

Nuclear Instruments and Methods

February 1, 1978

10.1016/0029-554x(78)90944-8

Cited by 11

Related Papers

Paramagnetism of the Co sublattice in ferromagnetic<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mi mathvariant="normal">Zn</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:msub><mml:mi mathvariant="normal">Co</mml:mi><mml:mi>x</mml:mi></mml:msub><mml:mi mathvariant="normal">O</mml:mi></mml:mrow></mml:math>films

|Physical Review B|2007|138

A review of ohmic and rectifying contacts on cadmium telluride

|Solid-State Electronics|1985|116

Open-circuit voltage of MIS silicon solar cells

|Journal of Applied Physics|1976|98

Properties of Vapour Phase Grown Mercuric Iodide Single Crystal Detectors

|IEEE Transactions on Nuclear Science|1975|78

Random and channeled energy loss in thin germanium and silicon crystals for positive and negative 2-15-GeV/<i>c</i>pions, kaons, and protons

|Physical review. B, Condensed matter|1978|77