Correlation between threshold voltage and channel dopant concentration in negative-type metal-oxide-semiconductor field-effect transistors studied by atom probe tomography

Hisashi Takamizawa(Tohoku University), Yasuyoshi Nagai(Central Research Institute of Electric Power Industry), Takahiro Miyagi(Toray Industries, Inc. (Japan)), Hiroshi Uchida(Toshiba (Japan)), Tohru Mogami(NEC (Japan)), T. Toyama(Tohoku University), Yasuo Shimizu(Tohoku University), Junichi Kato(Hiroshima University), Katsuyuki Kitamoto(Toray Industries, Inc. (Japan)), Akio Nishida(Renesas Electronics (Japan)), Koji Inoue(Tohoku University), Fumiko Yano(Tokyo City University), N. Okada(Toshiba (Japan)), Mikio Kato(Toshiba (Japan))
Applied Physics Letters
June 18, 2012
Cited by 24


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