1.3 µm GaInAsP SL-QW Al-oxide confined inner stripe lasers on <i>p</i> -InP substratewith AlInAs-oxide confinement layer

N. Iwai(Kyoto Prefectural University of Medicine), A. Kasukawa(Furukawa Electric (Japan)), Satoshi Arakawa, N. Yamanaka(Furukawa Electric (Japan)), T. Mukaihara(Furukawa Electric (Japan)), M. Itoh(Furukawa Electric (Japan)), H. Shimizu(Furukawa Electric (Japan))
Electronics Letters
July 9, 1998
Cited by 12


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