Magnetoresistive behavior of current-perpendicular-to-plane trilayer with half-metal insertions

Seongtae Bae(University of Minnesota), K. L. Teo(Data Storage Institute), Z. Y. Leong(Data Storage Institute), M. B. A. Jalil(National University of Singapore), S. Bala Kumar(University of Florida), Seng Ghee Tan(Data Storage Institute)
Journal of Applied Physics
April 15, 2006
Cited by 1


Related Papers