Electric-pulse-induced reversible resistance change effect in magnetoresistive films

Shangqing Liu(University of Houston), N. J. Wu(University of Houston), A. Ignatiev(University of Houston)
Applied Physics Letters
May 8, 2000
Cited by 850

Abstract

A large electric-pulse-induced reversible resistance change active at room temperature and under zero magnetic field has been discovered in colossal magnetoresistive (CMR) Pr0.7Ca0.3MnO3 thin films. Electric field-direction-dependent resistance changes of more than 1700% were observed under applied pulses of ∼100 ns duration and as low as ±5 V magnitude. The resistance changes were cumulative with pulse number, were reversible and nonvolatile. This electrically induced effect, observed in CMR materials at room temperature has both the benefit of a discovery in materials properties and the promise of applications for thin film manganites in the electronics arena including high-density nonvolatile memory.


Related Papers

No related papers found

Powered by citation graph analysis