Efficient Assembly of Bridged <i>β</i>‐Ga₂O₃ Nanowires for Solar‐Blind Photodetection

Abstract

Abstract An increasing number of applications using ultraviolet radiation have renewed interest in ultraviolet photodetector research. Particularly, solar‐blind photodetectors sensitive to only deep UV (&lt;280 nm), have attracted growing attention because of their wide applicability. Among recent advances in UV detection, nanowire (NW)‐based photodetectors seem promising, however, none of the reported devices possesses the required attributes for practical solar‐blind photodetection, namely, an efficient fabrication process, a high solar light rejection ratio, a low photocurrent noise, and a fast response. Herein, the assembly of β ‐Ga 2 O 3 NWs into high‐performance solar‐blind photodetectors by use of an efficient bridging method is reported. The device is made in a single‐step chemical vapor deposition process and has a high 250‐to‐280‐nm rejection ratio (∼2 × 10 3 ), low photocurrent fluctuation (&lt;3%), and a fast decay time (&lt;&lt;20 ms). Further, variations in the synthesis parameters of the NWs induce drastic changes in the photoresponse properties, which suggest a possibility for tuning the performance of the photodetectors. The efficient fabrication method and high performance of the bridged β ‐Ga 2 O 3 NW photodetectors make them highly suitable for solar‐blind photodetection.