Picosecond Time-Resolved X-Ray Diffraction from Si(111) under High-Power Laser Irradiation
Yoichiro Hironaka(Institute for Laser Technology), Ken‐ichi Kondo(Tokyo Institute of Technology), Kazutaka G. Nakamura(Tokyo Institute of Technology), Akio Yazaki(Tokyo Institute of Technology), Fumikazu Saito(Tokyo Institute of Technology)
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