High throughput fabrication of transition-metal-doped epitaxial ZnO thin films: A series of oxide-diluted magnetic semiconductors and their properties
Zhengwu Jin(Tokyo Institute of Technology), Hideomi Koinuma(Cabinet Office), Takashi Sekiguchi(National Institute for Materials Science), Takuya Hasegawa(Tokyo Institute of Technology), H. Saito(National Institute of Advanced Industrial Science and Technology), Makoto Murakami(Tokyo Institute of Technology), Yuji Matsumoto(Tokyo Institute of Technology), Tomoteru Fukumura(Japan Science and Technology Agency), Y.‐Z. Yoo(Tokyo Institute of Technology), Koji Ando(National Institute of Advanced Industrial Science and Technology), M. Kawasaki(RIKEN Advanced Science Institute)
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