Synthesis of CuInS<sub>2</sub>, CuInSe<sub>2</sub>, and Cu(In<sub><i>x</i></sub>Ga<sub>1-<i>x</i></sub>)Se<sub>2</sub>(CIGS) Nanocrystal “Inks” for Printable Photovoltaics

Matthew G. Panthani(The University of Texas at Austin), Vahid A. Akhavan(The University of Texas at Austin), Brian W. Goodfellow(The University of Texas at Austin), Johanna P. Schmidtke(The University of Texas at Austin), Lawrence Dunn(The University of Texas at Austin), Ananth Dodabalapur(The University of Texas at Austin), Paul F. Barbara(The University of Texas at Austin), Brian A. Korgel(The University of Texas at Austin)
Journal of the American Chemical Society
November 17, 2008
Cited by 917

Abstract

Chalcopyrite copper indium sulfide (CuInS2) and copper indium gallium selenide (Cu(InxGa(1-x))-Se2; CIGS) nanocrystals ranging from approximately 5 to approximately 25 nm in diameter were synthesized by arrested precipitation in solution. The In/Ga ratio in the CIGS nanocrystals could be controlled by varying the In/Ga reactant ratio in the reaction, and the optical properties of the CulnS2 and CIGS nanocrystals correspond to those of the respective bulk materials. Using methods developed to produce uniform, crack-free micrometer-thick films, CulnSe2 nanocrystals were tested in prototype photovoltaic devices. As a proof-of-concept, the nanocrystal-based devices exhibited a reproducible photovoltaic response.


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