Ferroelectric thin films: Review of materials, properties, and applications

N. Setter(École Polytechnique Fédérale de Lausanne), Dragan Damjanović(École Polytechnique Fédérale de Lausanne), Lukas M. Eng, Glen R. Fox(Eltron Research), Spartak Gevorgian(Ericsson (Sweden)), Seungbum Hong(Samsung (South Korea)), A. I. Kingon(North Carolina State University), H. Kohlstedt(Forschungszentrum Jülich), N. Y. Park(Samsung (South Korea)), G. B. Stephenson(Argonne National Laboratory), I. Stolitchnov(École Polytechnique Fédérale de Lausanne), A. K. Taganstev(École Polytechnique Fédérale de Lausanne), D. V. Taylor(École Polytechnique Fédérale de Lausanne), Tomoaki Yamada(École Polytechnique Fédérale de Lausanne), S. K. Streiffer(Argonne National Laboratory)
Journal of Applied Physics
September 1, 2006
Cited by 1,874Open Access
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Abstract

An overview of the state of art in ferroelectric thin films is presented. First, we review applications: microsystems’ applications, applications in high frequency electronics, and memories based on ferroelectric materials. The second section deals with materials, structure (domains, in particular), and size effects. Properties of thin films that are important for applications are then addressed: polarization reversal and properties related to the reliability of ferroelectric memories, piezoelectric nonlinearity of ferroelectric films which is relevant to microsystems’ applications, and permittivity and loss in ferroelectric films—important in all applications and essential in high frequency devices. In the context of properties we also discuss nanoscale probing of ferroelectrics. Finally, we comment on two important emerging topics: multiferroic materials and ferroelectric one-dimensional nanostructures.


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