InGaN multiple quantum well laser diodes grown by molecular beam epitaxy
S. E. Hooper(Sharp Laboratories of Europe (United Kingdom)), Jon Heffernan(Engineering and Physical Sciences Research Council), Kelsey E. Johnson(University of Minnesota), M. Kauer(Sharp Laboratories of Europe (United Kingdom)), V. Bousquet(Sharp Laboratories of Europe (United Kingdom)), J. Barnes(Sharp Laboratories of Europe (United Kingdom))
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