The influence of 180° ferroelectric domain wall width on the threshold field for wall motion
Samrat Choudhury(Pennsylvania State University), Venkatraman Gopalan(Pennsylvania State University), Volkmar Dierolf(Lehigh University), Anna N. Morozovska(V.E. Lashkaryov Institute of Semiconductor Physics), Sergei V. Kalinin(University of Tennessee at Knoxville), Pavel Čapek(Lehigh University), Nozomi Odagawa(Tohoku University), Eugene А. Eliseev(National Academy of Sciences of Ukraine), Long‐Qing Chen(Pennsylvania State University), Lili Tian(Pennsylvania State University), Yasuo Cho(Tohoku University), Aravind Vasudevarao(Pennsylvania State University), Yulan Li(Pennsylvania State University)
Cited by 60
Related Papers
Room-temperature ferroelectricity in strained SrTiO3
|Nature|2004|2.1k
Conduction at domain walls in oxide multiferroics
|Nature Materials|2009|1.4k
Ultrahigh piezoelectricity in ferroelectric ceramics by design
|Nature Materials|2018|1.4k
A Strain-Driven Morphotropic Phase Boundary in BiFeO <sub>3</sub>
|Science|2009|1.2k