Nonvolatile resistive switching in metal/La-doped BiFeO<sub>3</sub>/Pt sandwiches

Mi Li(Chinese Academy of Sciences), Fei Zhuge(Ningbo Institute of Industrial Technology), Xiaojian Zhu(Ningbo Institute of Industrial Technology), Kuibo Yin(Chinese Academy of Sciences), Jinzhi Wang(Chinese Academy of Sciences), Yiwei Liu(Ningbo Institute of Industrial Technology), Congli He(Ningbo Institute of Industrial Technology), Bin Chen(Ningbo Institute of Industrial Technology), Run‐Wei Li(Ningbo Institute of Industrial Technology)
Nanotechnology
September 22, 2010
10.1088/0957-4484/21/42/425202
Cited by 119

Abstract

The resistive switching (RS) characteristics of a Bi(0.95)La(0.05)FeO(3) (La-BFO) film sandwiched between a Pt bottom electrode and top electrodes (TEs) made of Al, Ag, Cu, and Au have been studied. Devices with TEs made of Ag and Cu showed stable bipolar RS behaviors, whereas those with TEs made of Al and Au exhibited unstable bipolar RS. The Ag/La-BFO/Pt structure showed an on/off ratio of 10(2), a retention time > 10(5) s, and programming voltages < 1 V. The RS effect can be attributed to the formation/rupture of nanoscale metal filaments due to the diffusion of the TEs under a bias voltage. The maximum current before the reset process (on-to-off switching) was found to increase linearly with the current compliance applied during the set process (off-to-on switching).

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