Defect emissions in ZnO nanostructures

Aleksandra B. Djurišić(University of Hong Kong), Y. H. Leung(University of Hong Kong), K. H. Tam(University of Hong Kong), Y. F. Hsu(University of Hong Kong), Lu Ding(Hong Kong University of Science and Technology), Weikun Ge(Hong Kong University of Science and Technology), Yongchun Zhong(Hong Kong University of Science and Technology), Kam Sing Wong(Hong Kong University of Science and Technology), W. K. Chan(University of Hong Kong), Hoi Lam Tam(Hong Kong Baptist University), Kok‐Wai Cheah(Hong Kong Baptist University), Wai‐Ming Kwok(University of Hong Kong), David Lee Phillips(University of Hong Kong)
Nanotechnology
January 24, 2007
Cited by 696

Abstract

Defects in three different types of ZnO nanostructures before and after annealing under different conditions were studied. The annealing atmosphere and temperature were found to strongly affect the yellow and orange-red defect emissions, while green emission was not significantly affected by annealing. The defect emissions exhibited a strong dependence on the temperature and excitation wavelength, with some defect emissions observable only at low temperatures and for certain excitation wavelengths. The yellow emission in samples prepared by a hydrothermal method is likely due to the presence of OH groups, instead of the commonly assumed interstitial oxygen defect. The green and orange-red emissions are likely due to donor acceptor transitions involving defect complexes, which likely include zinc vacancy complexes in the case of orange-red emissions. © IOP Publishing Ltd.


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