High-power InGaN light emitting diodes grown by molecular beam epitaxy

Kelsey E. Johnson(University of Minnesota), Jon Heffernan(Engineering and Physical Sciences Research Council), M. Kauer(Sharp Laboratories of Europe (United Kingdom)), S. E. Hooper(Sharp Laboratories of Europe (United Kingdom)), V. Bousquet(Sharp Laboratories of Europe (United Kingdom)), Christoph Zellweger(Sharp Laboratories of Europe (United Kingdom))
Electronics Letters
September 30, 2004
Cited by 17


Related Papers