Quasi-One-Dimensional Channel GaAs/AlGaAs Modulation Doped FET Using a Corrugated Gate Structure
Makoto Okada(Fujitsu (Japan)), Akihiro Shibatomi(Fujitsu (Japan)), M. Matsuda(Fujitsu (Japan)), Toshio Ohshima(Waseda University), Naoki Yokoyama(Kobe University)
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