Electron Microscopy Investigation of the Role of Surface Steps in the Generation of Dislocations during MOCVD Growth of GaN on 4H-SiC
Nabil Bassim(United States Naval Research Laboratory), Andrew J. Trunek(Ohio Aerospace Institute), R.L. Henry(United States Naval Research Laboratory), J. A. Powell(Institut National de la Recherche Scientifique), M. E. Twigg(United States Naval Research Laboratory), Philip G. Neudeck(Glenn Research Center), Michael E. Mastro(United States Naval Research Laboratory), Ruth Holm(University of Aleppo)
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