Enhanced effect of strain-induced polarization Coulomb field scattering in AlN/GaN heterostructure field-effect transistors
Yuanjie Lv(Hebei Semiconductor Research Institute), Qihao Yang, Bai-Cheng Sheng, Zhaojun Lin, Chongbiao Luan, Bo Liu(Xi'an Jiaotong University), Zhihong Feng(Stomatology Hospital), Yulong Fang, Tingting Han, Jiayun Yin, Guodong Gu, Shaobo Dun, Shujun Cai
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