Cubic AgPb <i> <sub>m</sub> </i> SbTe <sub>2+</sub> <i> <sub>m</sub> </i> : Bulk Thermoelectric Materials with High Figure of Merit

Kuei Fang Hsu(Aristotle University of Thessaloniki), Sim Loo(Aristotle University of Thessaloniki), Fu Guo(Aristotle University of Thessaloniki), Wei Chen(Aristotle University of Thessaloniki), Jeffrey S. Dyck(Aristotle University of Thessaloniki), Ctirad Uher(Aristotle University of Thessaloniki), Tim Hogan(Aristotle University of Thessaloniki), Efstathios K. Polychroniadis(Aristotle University of Thessaloniki), Mercouri G. Kanatzidis(Aristotle University of Thessaloniki)
Science
February 5, 2004
Cited by 2,912

Abstract

The conversion of heat to electricity by thermoelectric devices may play a key role in the future for energy production and utilization. However, in order to meet that role, more efficient thermoelectric materials are needed that are suitable for high-temperature applications. We show that the material system AgPb(m)SbTe(2+m) may be suitable for this purpose. With m = 10 and 18 and doped appropriately, n-type semiconductors can be produced that exhibit a high thermoelectric figure of merit material ZTmax of approximately 2.2 at 800 kelvin. In the temperature range 600 to 900 kelvin, the AgPb(m)SbTe(2+m) material is expected to outperform all reported bulk thermoelectrics, thereby earmarking it as a material system for potential use in efficient thermoelectric power generation from heat sources.


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