Photoluminescence emission and Raman response of monolayer MoS_2, MoSe_2, and WSe_2

Philipp Tonndorf(Chemnitz University of Technology), Robert Schmidt(Chemnitz University of Technology), Philipp Böttger(Chemnitz University of Technology), Xiao Zhang(Chemnitz University of Technology), Janna Börner(Chemnitz University of Technology), A. Liebig(Chemnitz University of Technology), M. Albrecht(Chemnitz University of Technology), Christian Kloc, Ovidiu D. Gordan(Chemnitz University of Technology), Dietrich R. T. Zahn(Chemnitz University of Technology), Steffen Michaelis de Vasconcellos(Chemnitz University of Technology), Rudolf Bratschitsch(Chemnitz University of Technology)
Optics Express
February 20, 2013
10.1364/oe.21.004908
Cited by 1,500Open Access
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Abstract

We mechanically exfoliate mono- and few-layers of the transition metal dichalcogenides molybdenum disulfide, molybdenum diselenide, and tungsten diselenide. The exact number of layers is unambiguously determined by atomic force microscopy and high-resolution Raman spectroscopy. Strong photoluminescence emission is caused by the transition from an indirect band gap semiconductor of bulk material to a direct band gap semiconductor in atomically thin form.

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