Photoconductor gain mechanisms in GaN ultraviolet detectors
E. Muñoz(Universidad Politécnica de Madrid), E. Monroy(Universidad Politécnica de Madrid), José A. Garrido(Universidad Politécnica de Madrid), I. Izpura(Universidad Politécnica de Madrid), F.J. Sánchez(Universidad Politécnica de Madrid), M. A. Sánchez-Garcı́a(Universidad Politécnica de Madrid), E. Calleja(Universidad Politécnica de Madrid), B. Beaumont(Centre National de la Recherche Scientifique), P. Gibart(Centre National de la Recherche Scientifique)
Cited by 170
Abstract
GaN photoconductive detectors have been fabricated on sapphire substrates by metal organic vapor phase epitaxy and gas-source molecular beam epitaxy on Si (111) substrates. The photodetectors showed high photoconductor gains, a very nonlinear response with illuminating power, and an intrinsic nonexponential photoconductance recovery process. A novel photoconductor gain mechanism is proposed to explain such results, based on a modulation of the conductive volume of the layer.
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